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RFL1N10 - N-Channel Power MOSFET

General Description

These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power.

Key Features

  • 1A, 80V and 100V.
  • rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering Information PART NUMBER RFL1N08 RFL1N10.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor RFL1N08, RFL1N10 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs Description These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282. September 1998 Features • 1A, 80V and 100V • rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.