RFL1N10 Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09282.
RFL1N10 Key Features
- 1A, 80V and 100V
- rDS(ON) = 1.200Ω